<~>c.ml- conductor 5p^ocluct*., una, 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . 2n1671 b silico n unijunctio n transistor s telephone : (201 ) 378-292 2 (212)227-600 5 fax : (201 ) 376-896 0 *al l lead s insulate d fro m case . ?otmw t ..m l ( > u-* | mm . c note s a . thi s zon e i s controlle d fo r auto - mati c handling . th e variatio n i n actua l diamclcrwilhi n thi s zon e shall , no t excee d 0.010 . b . measure d (ra m mai , diamete r o l th e actua l device . c . th e specifie d lea d diamete r ap - plie s i n th e ton e betwee n 0.05 0 an d 0.25 0 fro m th e bas e seal . betwee n o.zjoan d 1.5maximu m o f 0.02 1 diam > ete r i s held . outsid e o f thes e zone s th e lea d diamete r i s no t controlled . dimension s ar e i n inche s unles s otherwis e specified . absolute maximu m rating s (25c ) rm s powe r dissipatio n rm s emitte r curren t pea k emitte r curren t emitte r revers e voltag e intcrbns c votlng o operatin g temperatur e rang e stornjr o triuporntur e rnng a 45 0 m w 5 0 m a 2 n m pore s 3 0 'volt s .3 5 volts -ob'c-t o + 140' c -fifi' c t o +160* 0 electrica r characteristic s (25c ) paramete r intrinsi c stnndof t rati o (v, . = 10v ) interbas c resistanc e (vn ? = 3v , i n = 0 ) emitte r saturatio n voltag e (v p , = 10v , i k =.5 0 ma ) modulate d interbas c curren t (v? p = 10v , i k = 5 0 ma ) emitte r revers e curren t (vm * = 30v , i m = 0 ) pea k poin t emitte r curren t (v ? = 25v ) valle y poin t curren t (v f , = 20v , r ? = 1000 ) base-on e pea k puls e voltag e symbo l t rkr a vk(sat ) u(mod ) iki i i r i ? v,,? , min . max . 0.4 7 o.c 2 4. 7 0. 1 5 0. 8 2 2 0. 2 0 8 3. 0 unit s kf l voll ? m a /? ? /? ? m a vol u qualit y semi-conductor s downloaded from: http:///
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